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    Part Img VND670SP13TR datasheet by STMicroelectronics

    • DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DR
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • 8542.39.00.01
    • 8542.39.00.00
    • Find it at Findchips.com
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    VND670SP13TR datasheet preview

    VND670SP13TR Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in the application note AN4899, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
    • The datasheet provides a list of recommended external components, including resistors, capacitors, and inductors. Additionally, STMicroelectronics offers a dedicated tool, the eDesignSuite, which helps engineers select the optimal external components based on their specific application requirements.
    • The VND670SP13TR is rated for operation from -40°C to 150°C, but the maximum operating temperature range depends on the specific application and the thermal management system used. It's essential to consult the datasheet and application notes for guidance on thermal design and management.
    • The VND670SP13TR has a built-in overcurrent protection feature, which can be enabled by connecting the OCP pin to a suitable resistor and capacitor network. The application note AN4899 provides a detailed example of how to implement overcurrent protection.
    • The recommended power-up sequence is to first apply the input voltage (VIN) and then the enable signal (EN). This ensures that the device is properly initialized and configured before starting to operate.
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