Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img UMH10NFHATN datasheet by ROHM Semiconductor

    • NPN+NPN DIGITAL TRANSISTOR (CORR
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
    • Powered by Findchips Logo Findchips

    UMH10NFHATN datasheet preview

    UMH10NFHATN Frequently Asked Questions (FAQs)

    • ROHM recommends a thermal pad size of at least 2mm x 2mm, with multiple vias connecting to a solid ground plane to ensure efficient heat dissipation. A thermal relief pattern around the pad is also recommended to prevent thermal stress.
    • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for voltage and current. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature.
    • The maximum allowed voltage for the gate-source (Vgs) and gate-drain (Vgd) pins is ±20V, with a maximum transient voltage of ±30V for a duration of less than 100ns.
    • To prevent latch-up, ensure that the device is operated within the recommended voltage and current ranges. Avoid applying high voltage or current spikes to the device, and use a suitable gate resistor to limit the gate current.
    • The recommended gate resistor value is typically in the range of 1kΩ to 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce EMI and ringing, but may increase the turn-on time.
    Supplyframe Tracking Pixel