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    Part Img TLE2081CDR datasheet by Texas Instruments

    • Excalibur High-Speed JFET-Input Operational Amplifier
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • 8542.33.00.01
    • 8542.33.00.00
    • Find it at Findchips.com
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    TLE2081CDR datasheet preview

    TLE2081CDR Frequently Asked Questions (FAQs)

    • The maximum power dissipation of the TLE2081CDR is dependent on the package type and ambient temperature. For the SOIC package, the maximum power dissipation is 1.44W at 25°C. However, it's recommended to derate the power dissipation by 10mW/°C above 25°C.
    • To ensure stability in a unity-gain configuration, it's recommended to add a 10nF to 22nF capacitor between the output and the inverting input pins. This helps to compensate for the internal pole and ensures stability.
    • To minimize noise and EMI, it's recommended to follow good PCB layout practices such as keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the power pins. Additionally, it's recommended to use a low-ESR capacitor for power supply decoupling.
    • While the TLE2081CDR can be used as a comparator, it's not recommended due to its relatively slow slew rate and limited output current. Texas Instruments recommends using a dedicated comparator device, such as the TLV7031, for comparator applications.
    • The TLE2081CDR has internal ESD protection diodes, but it's still recommended to follow good ESD handling practices during assembly and testing. Additionally, it's recommended to use external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.
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