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    Part Img TK10A50W,S5X datasheet by Toshiba America Electronic Components

    • X35 PB-F POWER MOSFET TRANSISTOR
    • Original
    • Unknown
    • Unknown
    • Active
    • EAR99
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    TK10A50W,S5X datasheet preview

    TK10A50W,S5X Frequently Asked Questions (FAQs)

    • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • To ensure reliable operation, Toshiba recommends derating the power dissipation according to the ambient temperature, and using a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow and avoid thermal hotspots.
    • Toshiba recommends limiting voltage transients to less than 50V for a duration of less than 100ns to prevent damage to the device. Exceeding this limit may cause permanent damage or affect reliability.
    • Yes, the TK10A50W,S5X is suitable for high-frequency switching applications up to 100kHz. However, Toshiba recommends using a snubber circuit to reduce voltage spikes and ringing, and ensuring that the device is properly cooled.
    • Toshiba recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure optimal switching performance and minimize switching losses.
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