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    Part Img THS4511RGTT datasheet by Texas Instruments

    • THS4511 - Wideband, Low Noise, Low Distortion Fully Differential Amplifier 16-QFN -40 to 85
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • 8542.33.00.01
    • 8542.33.00.00
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    THS4511RGTT datasheet preview

    THS4511RGTT Frequently Asked Questions (FAQs)

    • A good PCB layout for the THS4511RGTT involves keeping the input and output traces short and away from each other, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated ground plane is recommended.
    • To ensure stability, it's essential to follow the recommended PCB layout, use a low-ESR output capacitor, and add a series resistor (Rs) in the feedback path. Additionally, ensure that the gain and phase margins are sufficient by analyzing the loop gain and phase response.
    • The maximum power dissipation of the THS4511RGTT is dependent on the ambient temperature and the thermal resistance of the package. The maximum power dissipation can be calculated using the formula: Pd = (TJ - TA) / θJA, where TJ is the junction temperature, TA is the ambient temperature, and θJA is the thermal resistance.
    • The optimal output capacitor for the THS4511RGTT depends on the output voltage, current, and frequency requirements. A general guideline is to use a low-ESR capacitor with a value between 10uF to 100uF, and a voltage rating that exceeds the maximum output voltage.
    • To mitigate EMI and RFI in the THS4511RGTT, use a shielded enclosure, keep the input and output traces short, use a common-mode choke, and add EMI filters at the input and output. Additionally, ensure that the PCB layout is optimized for minimal radiation and susceptibility.
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