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    Part Img STW23NM60N datasheet by STMicroelectronics

    • N-channel 600 V - 0.150 & - 19 A - D2PAK - I2PAK - TO-220/FP - TO-247, second generation MDmesh Power MOSFET
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    STW23NM60N datasheet preview

    STW23NM60N Frequently Asked Questions (FAQs)

    • The maximum junction temperature of the STW23NM60N is 150°C, but it's recommended to keep it below 125°C for reliable operation.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, the PCB design should allow for good thermal dissipation.
    • The recommended gate drive voltage for the STW23NM60N is between 10V and 15V, with a maximum of 20V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
    • Yes, the STW23NM60N is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal management, and PCB design to ensure reliable operation.
    • To protect the STW23NM60N from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.
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