The maximum junction temperature (Tj) of the STW18NK60Z is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To calculate the power dissipation of the STW18NK60Z, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
The recommended gate drive voltage for the STW18NK60Z is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and the risk of gate oxide breakdown.
Yes, the STW18NK60Z is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the switching losses, gate charge, and parasitic inductances when designing the circuit. It's also recommended to use a suitable gate driver and to optimize the PCB layout to minimize the parasitic inductances and capacitances.
To protect the STW18NK60Z from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and overcurrent protection (OCP) circuits. You can also use a fuse or a current-limiting resistor in series with the device to prevent overcurrent. Additionally, it's recommended to use a suitable heat sink and to monitor the device temperature to prevent thermal runaway.
STW18NK60Z datasheet
by STMicroelectronics
