The maximum junction temperature (Tj) for the STW13N95K3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To calculate the power dissipation of the STW13N95K3, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (RthJA). The formula is: Pd = (Vds * Ids) + (RthJA * Tj). You can find the values for Vds, Ids, and RthJA in the datasheet.
The recommended gate resistor value for the STW13N95K3 depends on the specific application and the gate driver used. A typical value is between 10 ohms and 100 ohms. However, it's essential to consult the datasheet and the gate driver's documentation for specific recommendations.
Yes, the STW13N95K3 is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled, and the layout is optimized to minimize parasitic inductances and capacitances. Additionally, you should consider the device's switching losses and ensure that they are within the recommended limits.
To protect the STW13N95K3 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. Additionally, you should ensure that the device is operated within its recommended safe operating area (SOA) and that the thermal protection is enabled.
STW13N95K3 datasheet
by STMicroelectronics
