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    STTH1R04Q datasheet by STMicroelectronics

    • Ultrafast recovery diode
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.10.00.80
    • 8541.10.00.80
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    STTH1R04Q datasheet preview

    STTH1R04Q Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the STTH1R04Q is -40°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
    • To ensure proper biasing, make sure to connect the gate-source voltage (Vgs) to a stable voltage source, and ensure the drain-source voltage (Vds) is within the recommended range. Also, use a suitable gate resistor (Rg) to limit the gate current and prevent oscillations.
    • For optimal thermal management, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good copper coverage and thermal vias to dissipate heat efficiently. Also, follow the recommended PCB layout guidelines in the datasheet to minimize parasitic inductance and capacitance.
    • Use a suitable overvoltage protection (OVP) circuit, such as a zener diode or a dedicated OVP IC, to clamp the voltage and prevent damage. Also, implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC to detect and respond to overcurrent conditions.
    • The recommended gate drive circuits for the STTH1R04Q include a totem pole configuration using a dedicated gate driver IC, or a bootstrap circuit with a high-voltage capacitor and a diode. The choice of gate drive circuit depends on the specific application requirements and the desired switching frequency.
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