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    Part Img STP9NM60N datasheet by STMicroelectronics

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6.5A TO-220
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
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    STP9NM60N datasheet preview

    STP9NM60N Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the STP9NM60N is 100 kHz, but it can be operated at higher frequencies with reduced performance.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V. Additionally, the gate current (Ig) should be limited to 100mA.
    • The maximum power dissipation of the STP9NM60N is 150W, but this can be increased with proper heat sinking and thermal management.
    • To protect the STP9NM60N from overvoltage and overcurrent, use a voltage regulator to limit the voltage to 600V or less, and use a current limiter or fuse to limit the current to 10A or less.
    • The thermal resistance of the STP9NM60N is 1.5°C/W (junction-to-case) and 40°C/W (junction-to-ambient).
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