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    Part Img STP8NM60N datasheet by STMicroelectronics

    • N-channel 600 V - 0.56 O: - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh Power MOSFET
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    STP8NM60N datasheet preview

    STP8NM60N Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) of the STP8NM60N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
    • To ensure the STP8NM60N is properly biased, follow the recommended biasing scheme outlined in the datasheet. This typically involves connecting the gate to a voltage source through a suitable resistor and capacitor network, and ensuring the drain-source voltage is within the recommended range. Additionally, consider the device's threshold voltage, gate-source voltage, and drain-source current ratings when designing the bias circuit.
    • For optimal thermal performance, it's recommended to use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, consider using a thermal pad or thermal vias to improve heat dissipation.
    • To protect the STP8NM60N from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-protected package. In the circuit design, consider adding ESD protection devices such as TVS diodes or ESD protection arrays to prevent voltage transients from damaging the device.
    • The recommended gate drive circuit for the STP8NM60N depends on the specific application requirements. A general-purpose gate drive circuit can be designed using a gate driver IC, such as the STMicroelectronics L638x series, along with a suitable resistor and capacitor network. The gate drive circuit should be designed to provide a fast rise and fall time, while also ensuring the gate-source voltage is within the recommended range.
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