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    Part Img STP4NA60FI datasheet by STMicroelectronics

    • N-Channel Enhancement Mode Fast Power MOS Transistor
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    STP4NA60FI datasheet preview

    STP4NA60FI Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the STP4NA60FI is 100 kHz, but it can be operated at higher frequencies with reduced performance.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V. Additionally, the gate current (Ig) should be limited to 100 mA.
    • The maximum power dissipation of the STP4NA60FI is 150 W, but this can be increased with proper heat sinking and thermal management.
    • To protect the STP4NA60FI from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and a current limiter or a fuse to limit the current.
    • The safe operating area (SOA) of the STP4NA60FI is defined by the maximum voltage and current ratings, and is typically limited by the thermal characteristics of the device.
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