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    Part Img STP30NM60N datasheet by STMicroelectronics

    • N-channel 600 V, 0.1 O, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    STP30NM60N datasheet preview

    STP30NM60N Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the STP30NM60N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
    • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB design should allow for good airflow and heat dissipation.
    • The recommended gate drive voltage for the STP30NM60N is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching frequency.
    • Yes, the STP30NM60N is suitable for high-reliability and automotive applications. It's essential to consult the device's qualification and certification documents, such as the AEC-Q101 qualification, to ensure that it meets the specific requirements of the application.
    • ESD protection is critical for the STP30NM60N. It's recommended to use ESD protection devices, such as TVS diodes or ESD arrays, on the device's pins to prevent damage from electrostatic discharge. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.
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