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    Part Img STP21NM60N datasheet by STMicroelectronics

    • N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    STP21NM60N datasheet preview

    STP21NM60N Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) of the STP21NM60N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
    • To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently.
    • The recommended gate drive voltage for the STP21NM60N is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses, but it may also increase the risk of gate oxide breakdown.
    • Yes, the STP21NM60N is a qualified device for high-reliability and automotive applications. It meets the requirements of the AEC-Q101 standard, which ensures that the device can operate reliably in harsh environments.
    • To protect the STP21NM60N from electrostatic discharge (ESD), it is essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe materials, such as ESD-safe workbenches and wrist straps, and ensuring that the device is properly grounded during handling and assembly.
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