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    Part Img STP15NM60ND datasheet by STMicroelectronics

    • N-channel 600 V - 0.27 Ohm - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    STP15NM60ND datasheet preview

    STP15NM60ND Frequently Asked Questions (FAQs)

    • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be determined by consulting the application notes and thermal modeling.
    • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver). Additionally, consider using a gate driver with a built-in voltage regulator to ensure a stable gate voltage.
    • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. Consult the application notes and thermal modeling guidelines for specific recommendations.
    • Implement overvoltage protection using a voltage clamp or a zener diode, and consider adding a current sense resistor to monitor and limit the device's current. Additionally, use a fuse or a current limiter to prevent excessive current in case of a fault.
    • Typically, a non-inverting gate drive configuration is recommended, with a gate voltage between 10-15V. For biasing, use a voltage divider or a dedicated biasing circuit to set the gate-source voltage. Consult the application notes and gate drive IC datasheets for specific recommendations.
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