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    Part Img STI26NM60N datasheet by STMicroelectronics

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A I2PAK
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
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    STI26NM60N datasheet preview

    STI26NM60N Frequently Asked Questions (FAQs)

    • The maximum junction temperature (Tj) of the STI26NM60N is 150°C, but it's recommended to keep it below 125°C for reliable operation.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/mK.
    • The recommended gate drive voltage for the STI26NM60N is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • Yes, the STI26NM60N is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the switching losses are minimized.
    • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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