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    STGWT40H65FB datasheet by STMicroelectronics

    • IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 283W TO3P-3L
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    STGWT40H65FB datasheet preview

    STGWT40H65FB Frequently Asked Questions (FAQs)

    • STMicroelectronics recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently.
    • Implement a robust thermal management system, ensure good airflow, and consider using a heat sink or thermal interface material to maintain a junction temperature below 150°C.
    • Monitor the drain-source voltage, drain current, and junction temperature to detect faults and protect the device from overvoltage, overcurrent, and overheating.
    • Use a gate driver with a high current capability (>1A) and a low output impedance to ensure fast switching times and minimize power losses.
    • A dead time of 100-200 ns is recommended to prevent shoot-through currents and ensure reliable operation.
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