The maximum junction temperature (Tj) of the STGW60H65DRF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is securely fastened to the device. Additionally, consider the airflow and thermal design of the system to prevent hot spots.
The recommended gate drive voltage for the STGW60H65DRF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
Yes, the STGW60H65DRF can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
The recommended dead time for the STGW60H65DRF depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is recommended to prevent cross-conduction and ensure reliable operation.
STGW60H65DRF datasheet
by STMicroelectronics
