The maximum junction temperature that the STGW60H65DFB can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
The recommended gate resistor value for the STGW60H65DFB is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
Yes, the STGW60H65DFB can be used in a half-bridge configuration. However, it's essential to ensure that the device is properly driven and that the gate-source voltage is within the recommended range to avoid damage.
To protect the STGW60H65DFB from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.
STGW60H65DFB datasheet
by STMicroelectronics
