The maximum junction temperature of the STGIPN3H60-H is 150°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
The recommended gate resistor value for the STGIPN3H60-H is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
Yes, the STGIPN3H60-H can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
The recommended dead time for the STGIPN3H60-H in a half-bridge configuration is typically between 100 ns and 500 ns, depending on the specific application and switching frequency.
