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    Part Img STGE200NB60S datasheet by STMicroelectronics

    • N-channel 150A - 600V - ISOTOP low drop PowerMESH" IGBT
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
    • Find it at Findchips.com

    STGE200NB60S datasheet preview

    STGE200NB60S Frequently Asked Questions (FAQs)

    • The maximum junction temperature of the STGE200NB60S is 150°C, but it's recommended to keep it below 125°C for reliable operation.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. A thermal interface material (TIM) can also be used to improve heat transfer.
    • The recommended gate resistor value for the STGE200NB60S is between 10Ω and 100Ω, depending on the specific application and switching frequency.
    • Yes, the STGE200NB60S can be used in a parallel configuration to increase the current handling capability, but it's essential to ensure that the devices are properly matched and the gate signals are synchronized.
    • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be implemented using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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