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    STGB30V60F datasheet by STMicroelectronics

    • Discrete Semiconductor Products - Transistors - IGBTs - Single - TRENCH GATE FIELD-STOP IGBT, V S
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
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    STGB30V60F datasheet preview

    STGB30V60F Frequently Asked Questions (FAQs)

    • The maximum junction temperature that the STGB30V60F can withstand is 175°C.
    • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via array to dissipate heat efficiently.
    • The recommended gate resistor value for the STGB30V60F is between 10Ω and 100Ω, depending on the specific application and switching frequency.
    • Yes, the STGB30V60F is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
    • To protect the STGB30V60F from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and assembly procedures.
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