The maximum junction temperature (Tj) of the STF34NM60N is 150°C, but it's recommended to keep it below 125°C for reliable operation.
Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/mK.
The recommended gate drive voltage for the STF34NM60N is between 10V and 15V, with a maximum voltage of 20V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
Yes, the STF34NM60N can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent shoot-through currents.
The maximum allowed dv/dt for the STF34NM60N is 10 kV/μs, but it's recommended to limit it to 5 kV/μs to ensure reliable operation and minimize electromagnetic interference (EMI).