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    STD6N80K5 datasheet by STMicroelectronics

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 4.5A DPAK
    • Original
    • Yes
    • Unknown
    • Active
    • EAR99
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    STD6N80K5 datasheet preview

    STD6N80K5 Frequently Asked Questions (FAQs)

    • The STD6N80K5 is a power MOSFET, not a digital device, so it does not have a maximum operating frequency. However, it can switch at high frequencies (up to several hundred kHz) depending on the application and gate driver circuitry.
    • To ensure the STD6N80K5 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate driver circuit with a high current capability and a low output impedance is recommended.
    • The maximum safe operating area (SOA) of the STD6N80K5 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. As a general rule, the device should not be operated at a junction temperature above 150°C, and the drain-source voltage should not exceed 80V.
    • The STD6N80K5 is a commercial-grade device, and its reliability may not be suitable for high-reliability applications. For such applications, it is recommended to use a device with a higher reliability rating, such as a device with a longer lifespan or a device that is specifically designed for high-reliability applications.
    • To protect the STD6N80K5 from electrostatic discharge (ESD), it is recommended to handle the device in an ESD-protected environment, use ESD-protective packaging, and ensure that the device is properly grounded during handling and assembly.
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