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    STD30NF04LT datasheet by STMicroelectronics

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 30A DPAK
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
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    STD30NF04LT datasheet preview

    STD30NF04LT Frequently Asked Questions (FAQs)

    • The maximum junction temperature that the STD30NF04LT can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
    • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 2V to 4V. Additionally, use a suitable gate resistor (Rg) to limit the gate current.
    • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source pins close together, and use a ground plane to reduce electromagnetic interference (EMI).
    • To protect the STD30NF04LT from ESD, use anti-static packaging and handling procedures during storage and assembly. Implement ESD protection circuits, such as TVS diodes or ESD protection arrays, on the PCB to absorb ESD events.
    • The recommended cooling method for the STD30NF04LT is to use a heat sink with a thermal interface material (TIM) to improve heat transfer. Ensure good thermal contact between the heat sink and the device, and use a suitable thermal design to keep the junction temperature within the recommended range.
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