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    STB300NH02L datasheet by STMicroelectronics

    • N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    STB300NH02L datasheet preview

    STB300NH02L Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The STB300NH02L is a high-voltage IGBT, and the gate driver selection depends on the specific application requirements. STMicroelectronics recommends using a gate driver with a high peak current capability, such as the STGAP2SiCS or the L6385, and ensuring that the driver is compatible with the IGBT's gate-emitter voltage and current ratings.
    • The STB300NH02L can withstand voltage transients up to 1200 V, but it's essential to ensure that the device is properly snubbed and that the voltage transient duration is within the specified limits to prevent damage or malfunction.
    • STMicroelectronics recommends using a dedicated overcurrent protection IC, such as the STP05 or the L6275, which can detect overcurrent conditions and provide a fast shutdown signal to the IGBT. Additionally, the application note AN5046 provides guidelines for implementing overcurrent protection using a sense resistor and a comparator.
    • For high-power applications, STMicroelectronics recommends using a forced-air cooling system or a liquid cooling system to maintain the IGBT's junction temperature within the specified limits. The application note AN5046 provides guidelines for thermal management and cooling system design.
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