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    Part Img STB21NM50N-1 datasheet by STMicroelectronics

    • N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    STB21NM50N-1 datasheet preview

    STB21NM50N-1 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) of the STB21NM50N-1 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and maximum ratings. As a general rule, it's recommended to operate the device within the specified maximum ratings and thermal limits to ensure reliable operation.
    • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the following: ensure the gate-source voltage (Vgs) is within the recommended range, use a suitable gate driver, and provide adequate decoupling and filtering to minimize noise and oscillations.
    • For optimal thermal management, use a PCB layout that provides good thermal conductivity and minimizes thermal resistance. This can be achieved by using a thick copper layer, thermal vias, and a heat sink. Ensure the device is mounted correctly, and consider using a thermal interface material (TIM) to improve heat transfer. Follow STMicroelectronics' application notes and guidelines for PCB layout and thermal management.
    • To protect the STB21NM50N-1 from ESD and overvoltage, follow proper handling and storage procedures. Use ESD-safe materials and equipment, and ensure the device is properly grounded during handling. Implement overvoltage protection circuits, such as TVS diodes or zener diodes, to clamp voltage transients and prevent damage. Additionally, consider using a gate protection circuit to prevent overvoltage on the gate terminal.
    • The recommended gate drive circuits and components for the STB21NM50N-1 depend on the specific application and requirements. However, a general guideline is to use a gate driver with a high current capability, fast rise and fall times, and a suitable voltage rating. Consider using a dedicated gate driver IC or a discrete component-based solution with a suitable resistor, capacitor, and diode configuration. Refer to STMicroelectronics' application notes and gate drive circuit examples for guidance.
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