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    STB185N55F3 datasheet by STMicroelectronics

    • N-channel 55V - 3.2m Ohm - 120A - D2PAK/TO-220 STripFET Power MOSFET
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    STB185N55F3 datasheet preview

    STB185N55F3 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the STB185N55F3 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
    • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Typically, this involves connecting the gate to a voltage source, such as a voltage regulator or a resistive divider, and ensuring the drain-source voltage is within the recommended range.
    • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using thermal vias and a copper pour on the bottom layer. Additionally, ensure the device is mounted on a heat sink or a thermal pad to dissipate heat efficiently. Refer to the datasheet for specific layout and thermal management guidelines.
    • To protect the STB185N55F3 from overvoltage and overcurrent conditions, use voltage regulators, current limiters, and overvoltage protection (OVP) circuits. Additionally, ensure the device is operated within the recommended voltage and current ratings, and consider using a fuse or a current-sensing resistor to detect overcurrent conditions.
    • The recommended gate drive circuits for the STB185N55F3 typically involve using a gate driver IC or a discrete transistor-based driver. The gate driver should be capable of providing a high current pulse to quickly charge and discharge the gate capacitance. Refer to the datasheet for specific gate drive circuit recommendations and guidelines.
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