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    SIS892ADN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 28A PPAK 1212
    • Original
    • Unknown
    • Unknown
    • Not Recommended
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    SIS892ADN-T1-GE3 datasheet preview

    SIS892ADN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage temperature for the SIS892ADN-T1-GE3 is -40°C to 125°C.
    • Yes, the SIS892ADN-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
    • The maximum operating voltage for the SIS892ADN-T1-GE3 is 5.5V.
    • Yes, the SIS892ADN-T1-GE3 has built-in ESD protection, which helps protect the device from electrostatic discharge.
    • The typical power consumption of the SIS892ADN-T1-GE3 is 1.5mA (max) at 5V.
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