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    SIS452DN-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 35A 1212-8 PPAK
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
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    SIS452DN-T1-GE3 datasheet preview

    SIS452DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIS452DN-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
    • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
    • The maximum allowed voltage on the input pins of the SIS452DN-T1-GE3 is 5.5V. Exceeding this voltage may damage the device.
    • Yes, the SIS452DN-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
    • Handle the SIS452DN-T1-GE3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. The device has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).
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