Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIS444DN-T1-GE3 datasheet by Vishay Siliconix

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 35A POWERPAK1212
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SIS444DN-T1-GE3 datasheet preview

    SIS444DN-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIS444DN-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from their technical support team.
    • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal management, and consider the device's thermal resistance (RθJA) and junction temperature (Tj) ratings. Additionally, consult Vishay's application notes and reliability reports for more information.
    • The maximum allowed voltage on the input pins of the SIS444DN-T1-GE3 is the absolute maximum rating of 6V. Exceeding this voltage can cause permanent damage to the device. It's essential to ensure that the input voltage is within the recommended operating range to maintain device reliability.
    • The SIS444DN-T1-GE3 is designed for low-frequency switching applications. While it can be used in high-frequency applications, its performance may degrade due to increased switching losses and reduced efficiency. Consult Vishay's application notes and technical support team for guidance on high-frequency usage.
    • The SIS444DN-T1-GE3 is an ESD-sensitive device. To prevent damage, handle the device with proper ESD protection measures, such as using an ESD wrist strap, mat, or workstation. Follow standard ESD handling procedures and consult Vishay's application notes for more information.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel