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    SIRA00DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A SO8 PWR PK
    • Original
    • Unknown
    • Unknown
    • Not Recommended
    • EAR99
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    SIRA00DP-T1-GE3 datasheet preview

    SIRA00DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage condition for SIRA00DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
    • While SIRA00DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing for specific high-frequency use cases.
    • To prevent electrostatic discharge (ESD) damage, handle SIRA00DP-T1-GE3 components with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure a grounded workstation and follow proper handling procedures.
    • The recommended soldering profile for SIRA00DP-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a cooling rate of 6°C/s. Consult the datasheet for more detailed information.
    • While SIRA00DP-T1-GE3 meets various automotive standards, it's essential to consult with a Vishay Intertechnologies representative to ensure the component meets specific automotive application requirements and regulations.
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