The recommended land pattern for the SIR846DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay Power MOSFETs' (document number: 41551).
To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material. Additionally, ensure good airflow around the device and avoid blocking the heat sink's airflow path.
The maximum allowed voltage transient for the SIR846DP-T1-GE3 is specified in the datasheet as ±20 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
The SIR846DP-T1-GE3 is a commercial-grade device, not specifically designed for high-reliability or aerospace applications. For such applications, consider using a device with a higher qualification level, such as those meeting the requirements of the Aerospace Corporation's AC-PP-001 or NASA's EEE-INST-002.
Use the thermal resistance values (RθJC and RθJA) provided in the datasheet to calculate the junction temperature (Tj) based on the device's power dissipation (Pd). You can also use thermal simulation tools or consult with a thermal management expert.
SIR846DP-T1-GE3 datasheet
by Vishay Siliconix
