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    SIR846ADP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A SO8
    • Original
    • Unknown
    • Unknown
    • Not Recommended
    • EAR99
    • Find it at Findchips.com

    SIR846ADP-T1-GE3 datasheet preview

    SIR846ADP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended land pattern for SIR846ADP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for SIR Packages' (document number: 28311).
    • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the SIR846ADP-T1-GE3, and consider using a thermal interface material (TIM) to improve heat dissipation. Additionally, ensure proper PCB design and layout to minimize thermal resistance.
    • The maximum allowed voltage transient for the SIR846ADP-T1-GE3 is specified as 80 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
    • Yes, the SIR846ADP-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is properly snubbed to minimize ringing and voltage overshoot. Consult the datasheet and application notes for guidance on proper snubbing techniques.
    • Store the SIR846ADP-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 30°C, with a relative humidity of ≤ 60%.
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