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    Part Img SIR820DP-T1-GE3 datasheet by Vishay Siliconix

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 40A POWERPAKSO-8
    • Original
    • Unknown
    • Unknown
    • Not Recommended
    • EAR99
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    SIR820DP-T1-GE3 datasheet preview

    SIR820DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIR820DP-T1-GE3 is a pad layout with a minimum size of 2.5 mm x 2.5 mm, with a 1.5 mm x 1.5 mm thermal pad in the center. The pad layout should be designed to accommodate the device's thermal performance and ensure good thermal conduction.
    • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder paste with a melting point of 217°C to 221°C. The soldering process should be done in a nitrogen atmosphere to prevent oxidation. Additionally, ensure the PCB is clean and free of contaminants before soldering.
    • The maximum allowed voltage derating for the SIR820DP-T1-GE3 is 10% of the rated voltage. This means that if the device is rated for 100 V, the maximum allowed voltage derating would be 10 V. Exceeding this derating may affect the device's reliability and performance.
    • Yes, the SIR820DP-T1-GE3 is designed to operate in high-temperature applications up to 150°C. However, the device's performance and reliability may be affected at temperatures above 125°C. It's essential to consult the datasheet and application notes for specific guidance on high-temperature operation.
    • The SIR820DP-T1-GE3 should be stored in a dry, cool place, away from direct sunlight and moisture. During shipping, the devices should be packaged in anti-static bags or tubes to prevent electrostatic discharge damage. It's also recommended to follow the ESD handling procedures outlined in the datasheet and application notes.
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