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    Part Img SIR818DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A 8SOIC
    • Original
    • Unknown
    • Unknown
    • Not Recommended
    • EAR99
    • Find it at Findchips.com

    SIR818DP-T1-GE3 datasheet preview

    SIR818DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage condition for the SIR818DP-T1-GE3 is in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%.
    • Yes, the SIR818DP-T1-GE3 is suitable for high-reliability applications due to its high-quality materials, robust design, and rigorous testing procedures.
    • Handle the SIR818DP-T1-GE3 by the body, avoiding touching the leads or electrical contacts to prevent damage from electrostatic discharge (ESD) or contamination.
    • The recommended soldering profile for the SIR818DP-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/second and a ramp-down rate of 6°C/second.
    • Yes, the SIR818DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
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