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    Part Img SIR802DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A 8-SOIC
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    SIR802DP-T1-GE3 datasheet preview

    SIR802DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage condition for the SIR802DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
    • Yes, the SIR802DP-T1-GE3 is designed for high-reliability applications, including automotive, industrial, and aerospace industries, due to its high-temperature rating and robust construction.
    • The maximum surge current rating for the SIR802DP-T1-GE3 is 100 A for 10 ms, making it suitable for applications with high inrush currents.
    • Yes, the SIR802DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
    • The thermal resistance of the SIR802DP-T1-GE3 is 1.5°C/W, allowing for efficient heat dissipation in high-power applications.
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