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    Part Img SIR662DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 60A 8-SO PWRPAK
    • Original
    • Unknown
    • Yes
    • Not Recommended
    • EAR99
    • Find it at Findchips.com

    SIR662DP-T1-GE3 datasheet preview

    SIR662DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIR662DP-T1-GE3 is a rectangle with dimensions of 2.5 mm x 1.3 mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult with a PCB design expert to ensure optimal thermal performance.
    • To ensure proper soldering, follow the recommended soldering profile: peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. Use a solder with a melting point below 220°C, and ensure the PCB is clean and free of oxidation. A well-controlled soldering process is crucial to prevent thermal damage.
    • The SIR662DP-T1-GE3 is rated for operation from -55°C to 150°C (junction temperature). However, it's essential to consider the application's specific requirements and ensure the device is operated within its recommended temperature range to maintain reliability and performance.
    • To prevent electrostatic discharge (ESD) damage, handle the SIR662DP-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure the workspace is ESD-safe, and follow proper handling and storage procedures to prevent damage.
    • Store the SIR662DP-T1-GE3 in its original packaging, in a dry, cool place, away from direct sunlight and moisture. Avoid exposing the device to temperatures above 30°C or humidity above 60%. Proper storage conditions help maintain the device's reliability and shelf life.
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