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    Part Img SIR476DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 60A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
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    SIR476DP-T1-GE3 datasheet preview

    SIR476DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIR476DP-T1-GE3 is a 5-pin TO-252 (D-PAK) package with a minimum pad size of 1.5 mm x 2.5 mm and a maximum pad size of 2.5 mm x 3.5 mm, with a 0.5 mm spacing between pads.
    • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range (up to 150°C).
    • The maximum allowed voltage on the gate-source pin (VGS) of the SIR476DP-T1-GE3 is ±20 V, with a recommended maximum voltage of ±15 V to ensure reliable operation.
    • Yes, the SIR476DP-T1-GE3 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
    • To protect the SIR476DP-T1-GE3 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing.
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