The recommended land pattern for the SIR464DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's D2PAK and TO-252 Packages' (document number 28353).
To ensure reliability in high-temperature applications, it is essential to follow the recommended derating guidelines for the SIR464DP-T1-GE3. The device should be operated within the specified maximum junction temperature (Tj) of 175°C. Additionally, ensure proper thermal management, such as using a heat sink, to maintain a safe operating temperature.
The maximum allowed voltage for the SIR464DP-T1-GE3 is 100 V. Exceeding this voltage may damage the device or affect its reliability.
Yes, the SIR464DP-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rated frequency.
To prevent damage during storage and shipping, it is recommended to follow the Electrostatic Discharge (ESD) precautions outlined in the Vishay Intertechnologies' application note 'ESD Protection for Vishay's Discrete Semiconductors' (document number 28354).
SIR464DP-T1-GE3 datasheet
by Vishay Siliconix
