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    Part Img SIR436DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 40A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Obsolete
    • EAR99
    • Powered by Findchips Logo Findchips

    SIR436DP-T1-GE3 datasheet preview

    SIR436DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIR436DP-T1-GE3 is a standard SOD-123 package with a 1.6 mm x 0.8 mm pad size and a 0.5 mm x 0.5 mm thermal pad.
    • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a soldering flux compatible with the component's lead-free finish. Avoid overheating or applying excessive force, which can damage the component.
    • The maximum allowed voltage derating for the SIR436DP-T1-GE3 is 80% of the maximum rated voltage (30V) at high temperatures (above 150°C). Consult the datasheet for specific derating curves.
    • Yes, the SIR436DP-T1-GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the component's parasitic inductance and capacitance when designing the circuit.
    • To prevent electrostatic discharge (ESD) damage, handle the SIR436DP-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the workspace and tools are grounded, and avoid touching the component's pins or leads.
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