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    Part Img SIR426DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 30A 8-SOIC
    • Original
    • Unknown
    • Yes
    • Active
    • EAR99
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    SIR426DP-T1-GE3 datasheet preview

    SIR426DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SIR426DP-T1-GE3 is a rectangle with dimensions of 5.0 mm x 2.5 mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult with a PCB design expert to ensure optimal thermal performance.
    • To ensure the SIR426DP-T1-GE3 operates within its SOA, monitor the device's voltage, current, and temperature. Use a thermal management strategy, such as a heat sink or thermal interface material, to keep the junction temperature below 150°C. Also, ensure the device is not exposed to excessive voltage or current stress.
    • The maximum allowed voltage derating for the SIR426DP-T1-GE3 is 80% of the maximum rated voltage. This means that if the maximum rated voltage is 100 V, the maximum allowed voltage derating would be 80 V. However, it's recommended to consult with a design expert to determine the optimal voltage derating for your specific application.
    • The SIR426DP-T1-GE3 is a commercial-grade device, and its use in high-reliability or aerospace applications may require additional testing and qualification. It's recommended to consult with a design expert and the manufacturer to determine the device's suitability for such applications.
    • To handle the SIR426DP-T1-GE3's ESD sensitivity, follow proper ESD handling procedures, such as using ESD-protective packaging, wrist straps, and mats. Ensure that all personnel handling the device are properly grounded, and avoid touching the device's pins or leads.
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