Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img SIR418DP-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 40A PPAK 8SOIC
    • Original
    • Unknown
    • Yes
    • Not Recommended
    • EAR99
    • Powered by Findchips Logo Findchips

    SIR418DP-T1-GE3 datasheet preview

    SIR418DP-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended storage condition for SIR418DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
    • While SIR418DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing before using it in high-frequency applications.
    • To prevent electrostatic discharge (ESD) damage, handle SIR418DP-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper grounding procedures when handling the components.
    • The recommended soldering profile for SIR418DP-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds. However, it's recommended to consult the Vishay Intertechnologies application note for specific soldering guidelines.
    • While SIR418DP-T1-GE3 meets the requirements for automotive applications, it's essential to consult with a Vishay Intertechnologies representative to ensure compliance with specific automotive industry standards and regulations.
    Supplyframe Tracking Pixel