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    SIHP6N40D-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6A TO-220AB
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
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    SIHP6N40D-E3 datasheet preview

    SIHP6N40D-E3 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for SIHP6N40D-E3 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
    • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, which is the recommended minimum gate drive voltage. This will minimize the on-state resistance (Rds(on)) and ensure maximum current handling capability.
    • For optimal performance and thermal management, it's recommended to use a PCB layout with a large copper area for heat dissipation, and to keep the source and drain pins as close as possible to minimize parasitic inductance. A minimum of 2 oz copper thickness is recommended.
    • Yes, the SIHP6N40D-E3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the MOSFET's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and clean switching signal.
    • To protect the MOSFET from overvoltage and overcurrent conditions, use a suitable voltage regulator or overvoltage protection circuit, and consider adding a current sense resistor and a fuse or circuit breaker to detect and respond to overcurrent conditions.
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