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    SIHP30N60E-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220AB
    • Original
    • Unknown
    • Unknown
    • Transferred
    • EAR99
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    SIHP30N60E-GE3 datasheet preview

    SIHP30N60E-GE3 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the SIHP30N60E-GE3 is -55°C to 175°C.
    • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
    • The recommended gate drive voltage for the SIHP30N60E-GE3 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • To protect the SIHP30N60E-GE3 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
    • The maximum allowable current for the SIHP30N60E-GE3 is 30A, with a maximum pulsed current of 60A.
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