The maximum junction temperature for the SIHG22N60E-E3 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the maximum power dissipation of the device.
The recommended gate drive voltage for the SIHG22N60E-E3 is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
Yes, the SIHG22N60E-E3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
The recommended PCB layout for the SIHG22N60E-E3 involves keeping the power loops as small as possible, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. It's also recommended to use a Kelvin connection for the gate drive signal to reduce noise and ringing.
SIHG22N60E-E3 datasheet
by Vishay Siliconix
Findchips
Findchips