The maximum allowed power dissipation for the SIHG20N50C-E3 is dependent on the thermal resistance of the module and the ambient temperature. According to the datasheet, the maximum power dissipation is approximately 250W at a case temperature of 25°C.
To ensure the reliability of the SIHG20N50C-E3 in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the module. Additionally, the module should be operated within the recommended temperature range to prevent thermal overstress.
The recommended gate drive voltage for the SIHG20N50C-E3 is between 10V and 20V, with a typical value of 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
Yes, the SIHG20N50C-E3 can be used in parallel to increase current handling capability. However, it is essential to ensure that the modules are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
The maximum allowed dv/dt for the SIHG20N50C-E3 is 10kV/μs. Exceeding this value can lead to premature failure of the module.
SIHG20N50C-E3 datasheet
by Vishay Siliconix
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