The recommended gate resistor value for SIHG16N50C-E3 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the application note or contact Vishay's technical support for more specific guidance.
Yes, the SIHG16N50C-E3 is designed for high-frequency switching applications up to 100 kHz. However, it's essential to ensure that the device is properly cooled and that the switching frequency does not exceed the maximum rated frequency to avoid overheating and reduce the device's lifespan.
The maximum allowed voltage transient for SIHG16N50C-E3 is typically around 1.5 to 2 times the maximum rated voltage (Vces) for a short duration (typically < 1 us). However, it's recommended to consult the datasheet and application note for more specific guidance on voltage transient tolerance.
Yes, the SIHG16N50C-E3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive and cooling systems are designed to handle the increased current and heat generation.
The recommended storage temperature range for SIHG16N50C-E3 is -40°C to 125°C. It's essential to store the devices in a dry, cool place, away from direct sunlight and moisture to prevent damage and ensure long-term reliability.
SIHG16N50C-E3 datasheet
by Vishay Siliconix
