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    Part Img SIHB22N60E-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK
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    SIHB22N60E-E3 datasheet preview

    SIHB22N60E-E3 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the SIHB22N60E-E3 is -40°C to 150°C.
    • To ensure safe operation during overvoltage conditions, use a voltage clamp or a snubber circuit to limit the voltage spike, and ensure the device is operated within the recommended voltage range.
    • The recommended gate resistance value for the SIHB22N60E-E3 is between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
    • Yes, the SIHB22N60E-E3 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of characteristics, and the gate drive and thermal management are properly designed.
    • The maximum allowable dv/dt for the SIHB22N60E-E3 is 10 kV/μs, but it's recommended to limit it to 5 kV/μs or less to ensure reliable operation.
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