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    Part Img SIHB15N60E-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 15A DPAK
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    SIHB15N60E-GE3 datasheet preview

    SIHB15N60E-GE3 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the SIHB15N60E-GE3 is -55°C to 175°C.
    • Yes, the SIHB15N60E-GE3 is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
    • The recommended gate resistor value for the SIHB15N60E-GE3 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
    • Yes, the SIHB15N60E-GE3 can be used in parallel to increase current handling capability, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
    • The maximum allowed voltage transient for the SIHB15N60E-GE3 is 600 V, and it's essential to ensure that the device is not exposed to voltage transients exceeding this value to prevent damage or failure.
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